Jinrong Yuan, Ph.D.
Office: +1 (703) 995-9887
Mobile: +1 (434) 270-2034
Ph.D., University of Virginia, Electrical Engineering
B.E., Harbin Institute of Technology, Control Engineering
U.S. Patent and Trademark Office
Jinrong Yuan, Ph.D., is a registered patent agent at Bayes PLLC. Jinrong is experienced in drafting and prosecuting patent applications utilizing a wide range of electrical technologies. Jinrong has prepared and prosecuted hundreds of patent applications in electrical, software, Internet, medical device, and business methods field, such as in the areas of semiconductor device and manufacturing, display technology, thin film growth/characterization, software and Internet, wireless communication, circuit design, and nanotechnology. She also assisted in post-grant review proceedings before the Patent Trial and Appeal Board (PTAB) and assisted in invalidity and infringement analysis.
Jinrong received her Ph.D. degree in Electrical Engineering from the University of Virginia. Her doctoral research focused on III-V semiconductor materials and photodetectors. She designed, fabricated, and tested a multi-spectral photodetector for simultaneous detection of short and mid-infrared wavelengths. She had four years of hand-on microfabrication experience. Jinrong is familiar with various control systems. At Harbin Institute of Technology, Jinrong’s bachelor research focused on design and simulation of a neural-network based load feedback system.
Prior to joining Bayes, Jinrong practiced over four years at two IP boutique law firms in the Washington DC metro area.
Patent Office Practice
Appeals to the PTAB
AIA PTAB Proceedings
J. Yuan, Y. Chen, A. L. Holmes, J. C. Campbell, “Design, Fabrication, and Characterizations of Novel Multispectral Photodetectors Using Postgrowth Fabry–Perot Optical Filters for Simultaneous Near Infrared/Short-Wave Infrared Detection”, IEEE Journal of Quantum Electronics, vol. 50, issue 11, (2014)
J. Yuan, B. Chen, A. L. Holmes, “Near-Infrared Quantum Efficiency of uncooled Photodetectors based on InGaAs/GaAsSb Quantum Wells Lattice-matched to InP”, Electronic Letters, vol. 47, No. 20, (2011)
J. Yuan, A. L. Holmes, “Improved Quantum Efficiency of InGaAs/InP Photodetectors using a Ti/Au-SiO2 Phase-Matched-Layer Reflector”, Electronic Letters, vol. 48, No. 19, (2012)
B. Chen, J. Yuan, A. L. Holmes, “Modeling of the Electrical Characteristics of SWIR/MWIR InGaAs/GaAsSb Type-II MQW Photodiodes”, Proceedings of SPIE, the International Society for Optical Engineering, (2011)
W. Chen, J. Yuan, A. L. Holmes, P. Fay, “Evaluation of Deep Levels in In0.53Ga0.47As and GaAs0.5Sb0.5 Using Low-Frequency Noise and RTS Noise Characterization”, Physica Status Solidi (c), vol. 9, issue 2, pp. 251-254, (2011)
B. Chen, W. Jiang, J. Yuan, A. L. Holmes, “Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 µm”, Photonics Technology Letters, IEEE, vol. 23, No. 4, (2011)
B. Chen, W. Jiang, J. Yuan, A. L. Holmes, B. Onat, “SWIR/MWIR” InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells”, IEEE Journal of Quantum Electronics, vol 47, issue 9, pp. 1244-1250, (2011)
B. Chen, A. L. Holmes, W. Jiang, J. Yuan, “Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-Infrared Photodiodes”, 11th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), (2011)