​美国百琞律师事务所

原晋蓉 博士

专利代理人

办公电话: +1 (703) 995-9887

美国手机: +1 (434) 270-2034

电邮: jinrong.yuan@bayes.law

地址: 1765 Greensboro Station Place, Suite 900

          McLean, VA 22102, United States

  • Jinrong Yuan LinkedIn

教育背景

弗吉尼亚大学,电子工程系,博士

哈尔滨工业大学,控制工程系,学士

执业资格

美国专利商标局注册专利代理人

执业经验

原晋蓉(Jinrong) 在利用各种电气相关的专利起草和申请方面有丰富的经验。 Jinrong亲自撰写,递交和答辩了电子,软件,互联网,医疗设备和商业方法领域的数百项专利申请,涉及的领域如半导体器件和制造,显示技术,薄膜生长/表征,软件和互联网,无线通信等,电路设计,和纳米技术等。她还协助专利审判和上诉委员会(PTAB)的授权后审查程序,并协助无效和侵权分析。

 

Jinrong 拥有弗吉尼亚大学电气工程系的博士学位。她的博士研究主要集中在III-V半导体材料和光电探测器上。她设计,制造,并测试了一种多光谱光电探测器,用于同时探测短波和中红外波长。她有四年的半导体工艺制造。Jinrong也熟悉各种控制系统。在哈尔滨工业大学期间,Jinrong的学士研究专注于基于神经网络的负载反馈系统的设计和仿真。

 

在加入百琞(Bayes)律师事务所之前,Jinrong在华盛顿地区的两家律师事务所执业超过四年。

执业领域

专利局业务

  • 专利撰写

  • 专利申请

  • 向专利审判与上诉委员会(PTAB)的上诉

  • AIA法案下的PTAB无效程序

发表文献精选

J. Yuan, Y. Chen, A. L. Holmes, J. C. Campbell, “Design, Fabrication, and Characterizations of Novel Multispectral Photodetectors Using Postgrowth Fabry–Perot Optical Filters for Simultaneous Near Infrared/Short-Wave Infrared Detection”, IEEE Journal of Quantum Electronics, vol. 50, issue 11, (2014)

 

J. Yuan, B. Chen, A. L. Holmes, “Near-Infrared Quantum Efficiency of uncooled Photodetectors based on InGaAs/GaAsSb Quantum Wells Lattice-matched to InP”, Electronic Letters, vol. 47, No. 20, (2011)

 

J. Yuan, A. L. Holmes, “Improved Quantum Efficiency of InGaAs/InP Photodetectors using a Ti/Au-SiO2 Phase-Matched-Layer Reflector”, Electronic Letters, vol. 48, No. 19, (2012)

B. Chen, J. Yuan, A. L. Holmes, “Modeling of the Electrical Characteristics of SWIR/MWIR InGaAs/GaAsSb Type-II MQW Photodiodes”, Proceedings of SPIE, the International Society for Optical Engineering, (2011)

W. Chen, J. Yuan, A. L. Holmes, P. Fay, “Evaluation of Deep Levels in In0.53Ga0.47As and GaAs0.5Sb0.5 Using Low-Frequency Noise and RTS Noise Characterization”, Physica Status Solidi (c), vol. 9, issue 2, pp. 251-254, (2011)

B. Chen, W. Jiang, J. Yuan, A. L. Holmes, “Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 µm”, Photonics Technology Letters, IEEE, vol. 23, No. 4, (2011)

B. Chen, W. Jiang, J. Yuan, A. L. Holmes, B. Onat, “SWIR/MWIR” InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells”, IEEE Journal of Quantum Electronics, vol 47, issue 9, pp. 1244-1250, (2011)

B. Chen, A. L. Holmes, W. Jiang, J. Yuan, “Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-Infrared Photodiodes”, 11th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), (2011)

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